发明名称 |
Scalable flash EEPROM memory cell, method of manufacturing and operation thereof |
摘要 |
A scalable flash EEPROM cell has a semiconductor substrate with a drain and a source and a channel therebetween. A select gate is positioned over a portion of the channel and is insulated therefrom. A floating gate has a first portion over the select gate and insulated therefrom, and a second portion over a second portion of the channel and over the source, and is between the select gate and the source. A control gate is over the floating gate and is insulated therefrom. A memory array using this memory cell is also disclosed.
|
申请公布号 |
US5912843(A) |
申请公布日期 |
1999.06.15 |
申请号 |
US19970791863 |
申请日期 |
1997.01.31 |
申请人 |
INTEGRATED MEMORY TECHNOLOGIES, INC. |
发明人 |
JENG, CHING-SHI |
分类号 |
G11C16/04;H01L21/28;H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|