| 摘要 |
PROBLEM TO BE SOLVED: To prevent contamination to wafer in a semiconductor manufacturing equipment, wherein a wafer stage is located in a processing chamber and film formation and etching are conducted on the wafer on the stage while the temperature and gas are being controlled. SOLUTION: In order to prevent impurities in a base material of a stage from diffusing and emitted in the air, film formation and etching are conducted at a temperature lower than the melting point of the impurities. First, a wafer 2 is chucked on a stage 3. Then, a front gas WF6 6 is poured onto an upper face of the wafer 2 from a shower head 1, to form a film in the thickness of 5,000-7,000Å. At this time a back side gas 4, for example, H2 He and the like, is supplied toward a rear face of the wafer in order to prevent the front gas from creeping into the rear face. Here, the wafer processing temperature is set to 415 deg.C, a temperature at which impurities 6 (Zn) do not melt. The processing temperature may be a temperature lower than the temperature at which not all the impurities included in the stage melt.
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