发明名称 |
Electrically programmable non-volatile memory cells device for a reduced number of programming cycles |
摘要 |
A device incorporating electrically programmable nonvolatile memory cells for a small number of programming cycles, in which an individual cell is impressed, both during the write step and the erase step, a bias condition such that a charge flow can only occur between the drain region and the gate dielectric, and vice versa.
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申请公布号 |
US5926416(A) |
申请公布日期 |
1999.07.20 |
申请号 |
US19970807574 |
申请日期 |
1997.02.27 |
申请人 |
SGS - THOMSON MICROELECTRONICS S.R.L. |
发明人 |
BEVERINA, BRUNO;CAPPELLETTI, PAOLO;GASTALDI, ROBERTO |
分类号 |
G11C16/12;G11C16/14;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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