| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device setting up high peak current and low valley current. SOLUTION: Both tunnel phenommena of inter-band and in-band are observed in a semiconductor device. This device is provided with two active layers 21, 23 held between two barrier layers 4, 5. These active layers 21, 23 arranged between the second terminals 7, 9 are selected so that a conduction band edge 27 has lower energy than that of a valence electron band edge 25. The first active layer 21 has a first conduction band quantization energy level 29 in higher energy than that of the conduction band edge 27, while the second active layer 23 has a first valence electron quantized energy level 33 of lower energy than that of the valence electron band edge 25. In this constitution, the first valence electron quantized energy level 33 and the first conduction band quantized energy level 29 are arranged so as to form an arrayed monoenergetic level. |
