| 摘要 |
The process includes the deposition of a stack of Si/Si1-xGex/Si layers (2, 3, 4) on a gate oxide layer (1) in a single-wafer reactor and then the etching of the gate (GR) using an inorganic mask (5). Next, the gate (GR) is encapsulated in a material (7) which is non-oxidizing with respect to germanium before the isolating spacers (8) are formed.
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