TRANSISTER OF SEMICONDUCTOR AND PRODUCTION METHOD THEREOF

摘要

PURPOSE: A transistor in which a film of tantalum penta oxide is used as an insulating film is provided to have a high electric driving force even under a low voltage. CONSTITUTION: A transistor of a semiconductor element is produced in the following process; forming a gate insulating film with a laminated oxynitride film(24) and a tantalum pentaoxide film(26) one after another on a semiconductor substrate(20); after forming a field oxide film(22) to electrically insulate between the activated area on the semiconductor substrate(20), forming a source/drain(not illustrated) by injecting a dopant ion selectively; after forming an oxynitride film(24) and evaporating a metal on the oxynitride film(24), forming a gate electrode(24) by making a pattering.