| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for making II-VI compounds semiconductor crystal excellent in crystallinity grow by restraining stress exerted from a supporting member to seed crystal when making II-VI compounds semiconductor crystal grow on seed crystal by sublimation technique or chemical vapor trans port one. SOLUTION: When the method for making II-VI compounds semiconductor crystal grow is conducted by placing a polycrystalline raw material in a growth chamber and by making II-VI compounds semiconductor crystal grow on seed crystal by sublimation technique or chemical vapor transport one, the underside of seed crystal is preliminarily polished so as to have a flat and smooth surface, a seed crystal-supporting member is made of a material nearly transparent to visible light and/or infrared one, at least one end of the supporting member is finished so as to become flat and smooth face, the supporting member is formed in such a way that the effective permeability of visible light and/or infrared one each passing through the flat and smooth face becomes higher at the central part and lower at the peripheral one and the crystal growth is carried out by making the smooth surface of seed crystal be closely contacted with the smooth face of the supporting member.
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