| 摘要 |
<p>A reaction assembly (30) of a vapor-phase deposition system (10) includes a reaction chamber (38) leading to a gullet outlet (34b), and a sheath (36) leading to a sheath outlet (32b). The gullet outlet (34b) and the sheath outlet (32b) at the distal end (30b) of the reaction assembly (30), the distal end (30b) including a compound nozzle (33). The reaction assembly (30) generates a compound gas stream (42) for projection from the compound nozzle (33) towards a target substrate (14). The compound gas stream (42) includes a reagent gas stream (44) and a sheath gas stream (46), wherein the sheath gas stream (46) at least partially envelopes the reagent gas stream (44). Methods for generating and delivering a compound gas stream (42), and for performing vapor-phase deposition, are also disclosed.</p> |
