发明名称 SIMULATION METHOD FOR PATTERN LINE WIDTH AND SIMULATOR FOR PATTERN LINE WIDTH
摘要 PROBLEM TO BE SOLVED: To calculate the line-width change portion of a fine resist pattern with high calculation accuracy and with high validity by a method wherein a noise component which comprises a specific spatial frequency characteristic with reference to the fine resist pattern is observed and the line-width change component of the fine resist pattern is simulated by using the noise component. SOLUTION: The electron microscope image of a fine resist pattern which is observed actually by an observation or the like with an electron microscope at a low accelerating voltage is photographed from the surface of the fine resist pattern. Subsequently, the electron microscope image on the surface of the fine resist pattern which is observed actually is converted into a black and white image by a computer processing operation or the like. The shape of the black and white image is measured by using a digitizer (a coordinate reader) or the like. The coordinates of the biundary of the fine resist pattern are found. In succession, regarding the obtained coordinates of the boundary of the fine resist pattern, a high-frequency noise and an inclination portion are removed, and an FFT analysis is performed. Then, a spatial frequency characteristic with which the line-width change component of the fine resist pattern is provided can be found.
申请公布号 JP2000349002(A) 申请公布日期 2000.12.15
申请号 JP19990156607 申请日期 1999.06.03
申请人 SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC 发明人 OFUJI TAKESHI
分类号 H01L21/027;G03F7/26;(IPC1-7):H01L21/027 主分类号 H01L21/027
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