| 摘要 |
PROBLEM TO BE SOLVED: To improve characteristics of a semiconductor laser device having a distortion in the active layer and improve a long term reliability. SOLUTION: An N-type GaAs buffer layer 12, an N-type Al0.4Ga0.6As clad layer 13, an Al0.4Ga0.6As→Al0.05Ga0.95As0.74P0.26 (undoped) composition and strain gradient barrier layer 14, an InGaAs (undoped) active layer 15, an Al0.05 Ga0.95As0.74P0.26→Al0.4Ga0.6As (undoped) composition and strain gradient barrier layer 16, a P-type Al0.4Ga0.6As clad layer 17, a P-type In0.484Ga0.516P etching stop layer 18, a P-type Al0.4Ga0.6As clad layer 19, and a P-type GaAs contact layer are successively laminated on an N-type GaAs substrate 11. In this case, the barrier layers 14 and 16 are gradually increased in energy gap starting from the clad layers 13 and 17 toward the active layer 15 and also the lattice constant is gradually varied from the clad layers 13 and 17 toward the active layer 15.
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