发明名称 METHOD OF COATING PHOTRESIST LAYER ON WAFER FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A photoresist coating method is provided to obtain a uniform thickness of photoresist layer without defects by uniformly coating a photoresist layer on a wafer through spraying a photoresist material while rotating the wafer in low and high speeds. CONSTITUTION: A wafer is loaded on a rotation chuck. A nozzle is located to the center of the wafer for spraying a photoresist material. The photoresist material is sprayed for 1 to 15 seconds through a nozzle fixed to a central position of the wafer while rotating the rotation chuck loaded with the wafer in a low speed of 50 to 250 rpm. The rotation chuck loaded with the wafer is rotated in a high speed of 200 to 5000 rpm. Then, a photoresist layer is formed on the wafer. The wafer is unloaded from the rotation chuck for next process.
申请公布号 KR20010036694(A) 申请公布日期 2001.05.07
申请号 KR19990043809 申请日期 1999.10.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, GIL SU;KIM, SEONG IL;LIM, YEONG CHEOL;OH, JEONG EUN;SHIN, WON YEOL;SONG, CHUN HO
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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