发明名称 METHOD AND APPARATUS FOR PRODUCING COMPOUND SEMICONDUCTOR CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method and a device for producing a compound semiconductor crystal, which are effective to shorten growing time, to reuse used members, to prevent a grown crystal from being cracked and to suppress the formation of dislocation in the crystal. SOLUTION: In the device for producing a compound semiconductor crystal, the change of the amount of cumulative deformation of a ceramic rod 10, which is brought into contact with the upper surface of a quartz cap 4 for closing a PBN crucible 3, can be detected with a displacement sensor 11, when the compound semiconductor crystal is produced by a VB method. Thereby, it becomes possible to confirm the completely solidified state of the crystal, and further it becomes possible to shorten the growth cycle and to reuse members used for growing the crystal.
申请公布号 JP2001151594(A) 申请公布日期 2001.06.05
申请号 JP19990331775 申请日期 1999.11.22
申请人 HITACHI CABLE LTD 发明人 ITANI MASAYA;MIZUNIWA SEIJI;SASAHEN HIROSHI
分类号 H01L21/208;C30B11/00;(IPC1-7):C30B11/00 主分类号 H01L21/208
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