| 摘要 |
PURPOSE: A method for forming a storage electrode of a semiconductor device is provided to increase capacitance of a capacitor by increasing a surface area of a storage electrode. CONSTITUTION: The first interlayer dielectric pattern(14), an etching barrier pattern(18), and the second interlayer dielectric pattern(20) are formed on a semiconductor substrate(12) having a predetermined structure. An upper portion of a storage electrode contact plug(16) is exposed by etching the whole structure and removing the second interlayer dielectric pattern(20). The first sacrificial insulating layer pattern is formed on the whole structure. A conductive layer(24) is formed on the whole structure. The second sacrificial insulating layer pattern(28) is formed on the conductive layer(24). A storage electrode(26) is formed by etching the second sacrificial insulating layer pattern(28) and the conductive layer(24). The first sacrificial insulating layer pattern and the second sacrificial insulating layer pattern(28) are removed.
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