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发明名称
COMPOSITE DIODE
摘要
PURPOSE:To improve the V-I characteristics over a broad voltage area, by forming Schottky barrier on the surface of N type Si substrate, providing the P type diffusing area, and providing the Pt silicide layer.
申请公布号
JPS5353267(A)
申请公布日期
1978.05.15
申请号
JP19760127810
申请日期
1976.10.26
申请人
TOKYO SHIBAURA ELECTRIC CO
发明人
IKEDA TADASHI;KOGA TSUTOMU;AMANO TAKASHI
分类号
H01L27/06;H01L21/8222;H01L29/861;H01L29/872
主分类号
H01L27/06
代理机构
代理人
主权项
地址
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