| 摘要 |
PROBLEM TO BE SOLVED: To achieve working with high precision by canceling a surface step-difference of a laminated film which is formed so as to cover a first semiconductor laser light emitting element and turned into a second semiconductor laser light emitting element, when a semiconductor laser light emitting device oscillating two wavelengths is manufactured. SOLUTION: In this manufacturing method of the semiconductor laser light emitting device 1, the first and the second semiconductor laser light emitting elements 3, 5 which oscillate laser lights of different wavelengths are formed on a substrate 10. A first laminate 17 in which ternary based compound semiconductors are laminated is formed in a forming region 11 of the first semiconductor laser light emitting element on the substrate 10, and a second laminate 27 which covers the first laminate 17 and composed of quaternary based compound semiconductors is formed on the substrate 10. After that, a surface of the second laminate 27 is so flattened that a surface of the first laminate 17 is exposed, and ridge type current injection regions 32, 33 are formed on a clad layer. A current constriction region 34 is formed, the first laminate 17 and the second laminate 27 are separated, and a space 35 is formed between the laminates.
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