| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for inspecting an epitaxial wafer for HBT conveniently at a low cost without requiring an expensive mask aligner or an evaporation system in which an inspection can be started in a short time after finishing production of the epitaxial wafer for HBT. SOLUTION: A collector layer 3, a base layer 4, and an emitter layer 5 are formed sequentially on a substrate 1 to produce an epitaxial wafer 10 for HBT. Each layer 3, 4, 5 is etched at a part of the epitaxial wafer 10, using a mask of organic coating material formed by means of a writing instrument, e.g. a pen, or printing to form electrodes 11, 12, 13 thus manufacturing an HBT element for inspection. Quality of the epitaxial wafer 10 for HBT is determined by measuring only the current amplification factor of the HBT element for inspection.
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