| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor package that prevents cracks from being easily developed at a portion connected by solder, and the connection structure of a semiconductor chip. SOLUTION: At the lower-surface side of the semiconductor chip 30, insulating layers 136 and 236 are provided. In each insulating layer, a conductor circuit 143 and copper plating 239 are provided for electrically connecting to the semiconductor chip 30. Also, at the lower-surface side of the copper plating 239, a connection section 1 for connecting the semiconductor package 51 to a substrate 50 is provided. The connection section 1 is composed of a core section 2 made of a resin material, a metal layer 3 for covering the surface of the core section 2, and a solder section 4 for covering the surface of the metal layer 3. Even if temperature rises at the connection portion for generating stress after the semiconductor package 51 is connected onto the substrate 50, the core section 2 absorbs the stress, thus reducing the cracking at the solder section 4. |
