| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor and its test method with which misalignment of a pattern can be measured effectively. SOLUTION: This device comprises an field effect transistor for an element formed on a wafer, and an field effect transistor for test formed on one part of a wafer, which has a plurality of sets of gate electrodes G1-G3 and ohmic electrodes E1-E4, provided on both sides of these gate electrodes G1-G3 and where the positions of the gate electrodes G1-G3 between the ohmic electrodes E1-E4 in a plurality of the sets are different.
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