In-situ stack for high volume production of isolation regions

摘要

A device stack for fabrication of an isolation structure and methods of fabricating the same are provided. In one aspect, a method of processing a substrate is provided that includes exposing the substrate to a plasma ambient containing nitrogen and oxygen to form a nitrogen containing interface. An oxide film is formed on the nitrogen containing interface and a silicon rich nitride film is formed on the oxide film. The silicon rich nitride film is exposed to a plasma ambient containing oxygen to convert an upper portion of the silicon rich nitride film to silicon oxynitride. The optical properties of the nitride film are enhanced so that UV lithographic patterning of etch masking is improved.