发明名称 |
Methods of forming dielectric materials, methods of forming capacitors, and capacitor constructions |
摘要 |
The invention encompasses a method of forming a dielectric material. A nitrogen-comprising layer is formed on at least some of the surface of a rugged polysilicon substrate to form a first portion of a dielectric material. After the nitrogen-comprising layer is formed, at least some of the substrate is subjected to dry oxidation with one or both of NO and N2O to form a second portion of the dielectric material. The invention also encompasses a method of forming a capacitor. A layer of rugged silicon is formed over a substrate, and a nitrogen-comprising layer is formed on the layer of rugged silicon. Some of the rugged silicon is exposed through the nitrogen-comprising layer. After the nitrogen-comprising layer is formed, at least some of the exposed rugged silicon is subjected to dry oxidation conditions with one or both of NO and N2O. Subsequently, a conductive material layer is formed over the nitrogen-comprising layer. Additionally, the invention encompasses a capacitor structure. The structure includes a first capacitor electrode comprising a rugged polysilicon layer, a nitrogen-comprising layer on the rugged polysilicon layer, and a second capacitor electrode. The nitrogen-comprising layer is between the first and second capacitor electrodes.
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申请公布号 |
US2002066920(A1) |
申请公布日期 |
2002.06.06 |
申请号 |
US20010997620 |
申请日期 |
2001.11.29 |
申请人 |
MORADI BEHNAM;PING ER-XUAN;ZHENG LINGYI A.;PACKARD JOHN |
发明人 |
MORADI BEHNAM;PING ER-XUAN;ZHENG LINGYI A.;PACKARD JOHN |
分类号 |
H01L21/02;H01L21/314;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119;H01L29/00 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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