发明名称 Crystallization method of amorphous silicon
摘要 The present invention discloses a method of crystallizing amorphous silicon using a metal catalyst. More specifically, the method includes forming an amorphous silicon layer over a substrate, forming a plurality of metal clusters on the amorphous silicon film, forming a heat insulating layer on the amorphous silicon layer including the metal clusters, disposing a pair of electrodes on the heat insulating layer, simultaneously applying a thermal treatment and a voltage to crystallize the amorphous silicon, and removing the heat insulating layer including the electrodes from the substrate.
申请公布号 US2002086468(A1) 申请公布日期 2002.07.04
申请号 US20010998338 申请日期 2001.12.03
申请人 LG.PHILIPS LCD CO., LTD. 发明人 KIM HAE-YEOL;KIM BINN;YANG JOON-YOUNG;HAN SANG-SOO
分类号 H01L21/20;(IPC1-7):H01L21/00 主分类号 H01L21/20
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