| 摘要 |
PROBLEM TO BE SOLVED: To propose a manufacturing method of a chip semiconductor element wherein thermal-stress buffering plates can be bonded to the semiconductor element at a low temperature without generating reduction of its breakdown voltage, and the reliability of the bonding force of an alloy plate made of Al and Si to a Mo plate used as each thermal-stress buffering plate can be improved too. SOLUTION: IN the manufacturing method, firstly, there are formed a main electrode 12 and a gate electrode 11 by the depositions of Al on one side of a semiconductor element main body 10 formed out of a plurality of N-layers and P-layers whose corner portions are coated with passivation films 15. Next, there is formed a main electrode 13 by the deposition of Al on the other side of the main body 10. Thereafter, to both main electrodes 12, 13, via respective alloy plates 1, 2 made of Al and Si, and via respective Al layers 50, 51 which are formed by depositing Al on the respective one-sides of the thermal-stress buffering plates 30, 31 made of Mo, in the reduction atmosphere of the temperature range of 580-630 deg.C, the thermal-stress buffering plates 30, 31 are bonded. |
