| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for reducing direct contact resistance, keeping a punch-through margin, performing high energy SAC injection and reducing junction leakage. SOLUTION: This semiconductor integrated circuit device is provided with a substrate, a transistor formed on the substrate and composed of a source, a drain and a gate controlling a current flowing from the source to the drain and a contact plug electrically connected to at least one of the source and the drain and formed of a conductive material containing dopant. The contact plug is formed of at least a first layer and a second layer. The first layer is in contact with one of the source and the drain, and is formed of a material containing the dopant of a first density. The second layer is formed of the layer of the material containing the dopant of a second density. The first density is higher than the second density, and such a semiconductor integrated circuit device or the like is provided. |
