发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To improve reliability of data whose form is of mirror type and to realize a function correcting an error of mirror data. SOLUTION: Data of plural memory cells (MC0-MCm) read out to plural first data lines (PH0-PHm) are synthesized by a synthesizing/rewriting circuit 1, transmitted to a second data line DP, also, this synthesized data are rewritten again to the first data line. The synthesizing/rewriting circuit 1 performs addition processing at the time of synthesizing.
申请公布号 JP2002237195(A) 申请公布日期 2002.08.23
申请号 JP20010034964 申请日期 2001.02.13
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKAMI KAZUHIKO;NAKAOKA YOSHITO
分类号 G11C11/413;G06F12/16;G11C7/00;G11C7/10;G11C11/401;G11C29/04;(IPC1-7):G11C29/00 主分类号 G11C11/413
代理机构 代理人
主权项
地址