发明名称 FABRICATING METHOD FOR COLD CATHODE DEVICE AND COLD CATHODE
摘要 <p>PROBLEM TO BE SOLVED: To provide a technique capable of improving electron emission efficiency from a cold cathode. SOLUTION: In the fabricating method for the cold cathode device having a field emission cold cathode comprising a cathodic bus bar formed on a substrate and silicon electrically connected to the cathodic bus bar and a gate electrode arranged away from the electron emission cold cathode, a process is provided of adding an n-type impurity in an electron emitting area of the field emission cold cathode.</p>
申请公布号 JP2002270088(A) 申请公布日期 2002.09.20
申请号 JP20010066628 申请日期 2001.03.09
申请人 NIPPON HOSO KYOKAI <NHK> 发明人 SATO SHIRO;SEKI MASAHIKO;YAMAMOTO TOSHIHIRO;ATOZAWA MASAYOSHI;UEDA TOMOSHI;TAKEI TATSUYA;HAGIWARA HIROSHI
分类号 H01J9/02;H01J1/304;(IPC1-7):H01J9/02 主分类号 H01J9/02
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