发明名称 |
FABRICATING METHOD FOR COLD CATHODE DEVICE AND COLD CATHODE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a technique capable of improving electron emission efficiency from a cold cathode. SOLUTION: In the fabricating method for the cold cathode device having a field emission cold cathode comprising a cathodic bus bar formed on a substrate and silicon electrically connected to the cathodic bus bar and a gate electrode arranged away from the electron emission cold cathode, a process is provided of adding an n-type impurity in an electron emitting area of the field emission cold cathode.</p> |
申请公布号 |
JP2002270088(A) |
申请公布日期 |
2002.09.20 |
申请号 |
JP20010066628 |
申请日期 |
2001.03.09 |
申请人 |
NIPPON HOSO KYOKAI <NHK> |
发明人 |
SATO SHIRO;SEKI MASAHIKO;YAMAMOTO TOSHIHIRO;ATOZAWA MASAYOSHI;UEDA TOMOSHI;TAKEI TATSUYA;HAGIWARA HIROSHI |
分类号 |
H01J9/02;H01J1/304;(IPC1-7):H01J9/02 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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