发明名称 Transmission gate
摘要 Two terminals of each of transistors (P1, N1) are connected between two terminals (A, B). A body effect compensation circuit (COMP-P1) for the transistor (P1) and a body effect compensation circuit (COMP-N1) for the transistor (N1) are arranged. The back gates of transistors (P1P, P2P) in the circuit (COMP-P1) and transistors (P1N, P2N) in the circuit (COMP-N1) are commonly connected to the back gate of the transistor (P1). The back gates of transistors (N1N, N2N) in the circuit (COMP-N1) and transistors (N1P, N2P) in the circuit (COMP-P1) are commonly connected to the back gate of the transistor(N1). With this structure, in transferring a signal from one terminal (A or B) to the other terminal (B or A) or vice verse, the signal potential is transferred to the back gates of the transistors (P1, N1) at a high speed to increase the signal transfer speed.
申请公布号 US6462611(B2) 申请公布日期 2002.10.08
申请号 US20010029299 申请日期 2001.12.28
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SHIGEHARA HIROSHI;KINUGASA MASANORI;HISAMOTO TOSHINOBU
分类号 H03K19/0944;H03K17/06;H03K17/16;H03K17/687;(IPC1-7):H03K3/01 主分类号 H03K19/0944
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