| 摘要 |
PROBLEM TO BE SOLVED: To decrease concentration of nitrogen in an interface between a silicon substrate and a silicon oxidizing and nitriding film and increase concentration of nitrogen in the surface of the silicon oxidizing and nitriding film. SOLUTION: A silicon oxidizing film is formed on the silicon substrate and treated thermally in an NH3 gas atmosphere at a pressure of at most 50 Torrs, at a temperature of at least 1,000 deg.C for at most 60 sec, so that nitrogen is introduced in the silicon oxidizing film, and the silicon oxidizing and nitriding film is formed.
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