| 摘要 |
PROBLEM TO BE SOLVED: To realize low temperature process by improving the uniformity of film thickness when a semiconductor wafer is to be subjected to oxidation treatment using batch furnace. SOLUTION: In equipment where hydrogen gas and oxygen gas are burned by using an external burning device arranged outside the batch furnace and introduced as mixture gas of oxygen gas and water vapor into a reaction tube, and the so-called 'wet oxidation' is conducted, and a heating device is installed outside the batch furnace. The heating device has constitution, where a ventilation resistor is arranged in a flow channel for heating the gas, treatment gas with which treatment other than wet oxidation is conducted is made to flow in the ventilation resistor, and heating is performed by a heating means. For example, when dry oxidation is to be conducted, oxygen gas and hydrogen chloride gas are activated in the heating device, a very small amount of water vapor is previously generated, and dry oxidation is performed. When a silicon oxidation film containing nitrogen is to be formed by using dinitrogen monoxide gas, the gas is made to flow in the heating device, and activation is previously performed.
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