METHOD AND APPARATUS FOR FORMING FILM AND INSULATION FILM, AND SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To provide a method and an apparatus for forming a film capable of forming a boron-carbon-nitrogen film. SOLUTION: The method for forming the film comprises the steps of generating a plasma 50 in a cylindrical container 1, mainly exciting nitrogen atoms in the container 1, then reacting boron with carbon, and forming the boron- carbon-nitrogen film 61 on a substrate 60.