| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a dielectric film having an extremely low-k value on the surface of a semiconductor or an integrated circuit. SOLUTION: A dielectric substance of low-k value is produced by causing reaction of polygonal oligomer silsesquioxane and a coupling agent in a CVD system. The polygonal oligomer silsesquioxane compound has a chemical formula Sin O1.5n (R<1> )i (R<2> )j (R<3> )k , wherein n=i+j+k is in the range of about 6-20 and the R<1> , R<2> and R<3> represent, respectively, an organic functional group or a silicon functional group or a combination thereof.
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