| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
PROBLEM TO BE SOLVED: To stabilize the threshold voltage, and to increase the speed without deteriorating integration even if an SOI substrate is used. SOLUTION: An interval Ds between the source/drain impurity layer 7 and the sapphire substrate 1 is set to approximately 0.1 to 0.2μm.
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| 申请公布号 |
JP2003069033(A) |
申请公布日期 |
2003.03.07 |
| 申请号 |
JP20010260432 |
申请日期 |
2001.08.29 |
| 申请人 |
ASAHI KASEI MICROSYSTEMS KK |
发明人 |
KOBAYASHI TAKAAKI |
| 分类号 |
H01L27/12;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
H01L27/12 |
| 代理机构 |
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