发明名称 |
Method of forming a protective layer included in metal filled semiconductor features |
摘要 |
A method of forming a protective layer included in a metal filled semiconductor feature including providing a substrate including an insulating dielectric material having an anisotropically etched opening for forming a semiconductor feature; conformally depositing over the semiconductor feature at least one metal layer to substantially fill the semiconductor feature at least a portion of the at least one metal layer containing dopant impurities; and, thermally treating the substrate for a time period sufficient to redistribute the dopant impurities to preferentially collect along the periphery of the at least one metal layer.
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申请公布号 |
US6555474(B1) |
申请公布日期 |
2003.04.29 |
申请号 |
US20020060820 |
申请日期 |
2002.01.29 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HUANG CHENG LIN;TSAI MINGHSING;SHUE WINSTON;LIANG MONG-SONG |
分类号 |
H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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