发明名称 LASER IRRADIATION APPARATUS
摘要 PROBLEM TO BE SOLVED: To solve the problem wherein uniform annealing cannot be made to a body to be irradiated, since energy density is not sufficient, as compared with the region where the uniformity of energy density is high and is gradually attenuated in a region (an attenuation region), such as the end section of linear, rectangular, and planar laser beams that are formed on or near an irradiation surface by an optical system, where the energy density gradually attenuates due to the aberrations of a lens or the like. SOLUTION: A slit is used very close to an irradiation surface, the attenuation region of a laser beam is removed or reduced, and energy distribution at the end section of the laser beam is made steep. Installation to a portion which is very close to the irradiation surface is for restraining the spread of the laser beam. Additionally, a mirror is used instead of the slit, turns are made in the attenuation region of the laser beam for mutually strengthening by the attenuation regions, and energy distribution at the end section of the laser beam is made steep.
申请公布号 JP2003151915(A) 申请公布日期 2003.05.23
申请号 JP20020252455 申请日期 2002.08.30
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TANAKA KOICHIRO;MORIWAKA TOMOAKI
分类号 H01L21/20;H01L21/268;(IPC1-7):H01L21/268 主分类号 H01L21/20
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