发明名称 |
Photodiode detector and fabrication method thereof |
摘要 |
Disclosed is a photodiode detector including: an InP substrate; a u-In0.53Ga0.47As layer grown and stacked on the InP substrate; an u-Inp layer stacked on an upper portion of the u-In0.53Ga0.47As layer; a SiNx insulation layer stacked on an upper portion of u-Inp layer; an additional insulation layer stacked on an upper portion of the SiNx insulation layer; a P-InP layer formed by Zn diffusing on an u-Inp layer portion below an opening formed on a predetermined position between the additional insulation layer and the SiNx insulation layer; a P-metal layer positioned on an upper portion of the additional insulation layer; and an N-metal layer formed on a lower portion of the InP substrate together with a non-reflection layer. The photodiode detector of the present invention, forms BCB material having a low dielectric constant, which is relatively thick, on the upper portion of the SiNx insulation layer, thereby obtaining the desired capacitance.
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申请公布号 |
US2003129781(A1) |
申请公布日期 |
2003.07.10 |
申请号 |
US20020315586 |
申请日期 |
2002.12.10 |
申请人 |
YANG SEUNG-KEE;BAEK JEA-MYUNG |
发明人 |
YANG SEUNG-KEE;BAEK JEA-MYUNG |
分类号 |
H01L31/10;B32B9/00;H01L21/00;H01L31/0203;H01L31/072;H01L31/18;(IPC1-7):B32B9/00 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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