| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having structure which is hard to induce reverse narrow channel effect, and to provide its manufacturing method. SOLUTION: A silicon nitride film 13, having etching rate smaller than that of a sacrificial silicon oxide film 7, which is a sacrificial layer of ion implantation 8 is adopted in an element isolation region. As a result, a recessed part is hardly generated in the silicon nitride film 13, when the film 7 is eliminated, so that strength of an electric field in the gate end portion is reduced. When the electric field strength in the gate end portion is reduced, since the reverse narrow channel effect is restrained, the characteristics of an MOS transistor approach characteristics which have a constant threshold voltage, regardless of the channel width dimension, thereby enabling manufacturing of an MOS transistor having superior characteristics. COPYRIGHT: (C)2003,JPO
|
