| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which an element or particularly a transistor has excellent operating characteristics and reliability by forming a domain structure or a single crystal metal oxide insulating layer extremely strongly oriented in a normal direction to a board in the insulating layer on a silicon plane (001). SOLUTION: The semiconductor device comprises the single crystal or polycrystal metal oxide insulating layer which is formed on the silicon substrate (001) and in which a crystal plane or axis is oriented in the normal direction of the substrate (001), and a nitride layer of a monoatomic layer coupled to both a silicon atom of the substrate (001) and a metal atom of the metal oxide in an interface between the substrate and the insulating layer. COPYRIGHT: (C)2003,JPO
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