| 摘要 |
A semiconductor photonic device includes: a substrate; a ZnO buffer layer provided on the substrate; and an InxGayAlzN compound semiconductor layer provided on the ZnO layer, where x+y+z=1, 0<=x<=1, 0<=y<=1, 0<=z<=1, and wherein the ZnO buffer layer excludes, as a constituent element, an element of the InxGayAlzN compound semiconductor. Preferably, the ZnO buffer layer is doped with B, Sc, Y, La, Ac, Tl, V, Nb, Ta, P, As, Sb or Bi.
|
