发明名称 MAGNETO RESISTIVE FILM WITH SMALLER TEMPERATURE COEFFICIENT OF MAGNETO RESISTIVE RATIO
摘要 PROBLEM TO BE SOLVED: To provide a magneto resistive film which is useable in an environment where a temperature change is large, and which has a smaller temperature coefficient of a magneto resistive ratio (MR ratio), and exhibits greater magneto resistive effect with the MR ratio of 5% or more, and further which has a higher electric resistivity of 10<SP>4</SP>μΩcm or more. SOLUTION: A magneto resistive film is represented by a general formula (Fe<SB>1-a-b</SB>Co<SB>a</SB>Ni<SB>b</SB>)<SB>100-x-y-z</SB>M<SB>x</SB>O<SB>y</SB>F<SB>z</SB>, with M being a nano-granular thin film comprising an element of one kind or more selected from Be, Mg, Al, Si, Ca, Ti, V, Cr, Sr, Zr, Nb, Mo, Ba, Hf, Ta, W, and a rear earth element, and has a temperature coefficient of an MR ratio of±500 ppm/°C within a temperature range of from -50 to +120°C, and further exhibits greater magneto resistive effect having the MR ratio of 5% or more together with an electric resistivity of 10<SP>4</SP>μΩcm or higher. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003258333(A) 申请公布日期 2003.09.12
申请号 JP20020109814 申请日期 2002.03.06
申请人 RES INST ELECTRIC MAGNETIC ALLOYS 发明人 KOBAYASHI NOBUKIYO;ONUMA SHIGEHIRO;MASUMOTO TAKESHI
分类号 H01F10/10;H01L43/08;(IPC1-7):H01L43/08 主分类号 H01F10/10
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