发明名称 |
Optimized TaCN thin film diffusion barrier for copper metallization |
摘要 |
A new method of forming a tantalum carbide nitride diffusion barrier layer having optimized nitrogen concentration for improved thermal stability is described. A contact region is provided in a substrate. A via is opened through an insulating layer to the contact region. A tantalum carbide nitride barrier layer is deposited within the via wherein the tantalum carbide nitride layer has an optimized nitrogen content of between about 17% and 24% by atomic percentage. A layer of copper is deposited overlying the tantalum carbide nitride barrier layer to complete copper metallization in the fabrication of an integrated circuit device.
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申请公布号 |
US6624073(B2) |
申请公布日期 |
2003.09.23 |
申请号 |
US20010999453 |
申请日期 |
2001.12.03 |
申请人 |
PROMOS TECHNOLOGIES, INC.;MOSEL VITELIC INC.;INTINEON TECHNOLOGIES, INC. |
发明人 |
SUN SHI-CHUNG;TSAI HAO-YI |
分类号 |
H01L21/285;H01L21/768;H01L23/485;(IPC1-7):C23C14/34;H01L21/44 |
主分类号 |
H01L21/285 |
代理机构 |
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主权项 |
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地址 |
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