发明名称 CURRENT DETECTION CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a current detection circuit for accurately preventing a breakdown of a sensing MOSFET. SOLUTION: In a power MOSFET connected to a power supply and a load in series and turning a connection of the load on or off, the sensing MOSFET having a drain electrode and a gate electrode commonly connected to the power MOSFET and the current detection circuit connected between a source electrode of the sensing MOSFET and the load, the current detection circuit changes an impedance of a current circuit in accordance with a current change of the power MOSFET and limits a current of the sensing MOSFET. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003270275(A) 申请公布日期 2003.09.25
申请号 JP20020075383 申请日期 2002.03.19
申请人 HITACHI LTD 发明人 FUJINO SHINICHI;MASUNO KEIICHI;INNAMI TOSHIYUKI;GOTO HIROO;SHIGETA SATORU;SHIRAKAWA SHINJI;SAKANO JUNICHI
分类号 G01R19/165;(IPC1-7):G01R19/165 主分类号 G01R19/165
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