发明名称 |
Method for fabricating ultra thin single-crystal metal oxide wave retarder plates and waveguide polarization mode converter using the same |
摘要 |
A method for fabricating ultra-thin single-crystal metal oxide wave retarder plates, such as a zeroth-order X-cut single-crystal LiNbO3 half-wave plate, comprises ion implanting a bulk birefringent metal oxide crystal at normal incidence through a planar major surface thereof to form a damage layer at a predetermined distance d below the planar major surface, and detaching a single-crystal wave retarder plate from the bulk crystal by either chemically etching away the damage layer or by subjecting the bulk crystal having the damage layer to a rapid temperature increase to effect thermally induced snap-off detachment of the wave retarder plate. The detached wave retarder plate has a predetermined thickness d dependent on the ion implantation energy. A half-wave plate fabricated in accordance with this method may be used in conjunction with an optical waveguide section to form a TE-TM polarization mode converter by mounting the half-wave plate in a groove in the wageguide section perpendicular to the direction of wave propagation therein, bonding the half-wave plate to the back-end facet of the waveguide section or bonding the half-wave plate to the front-end facet of the waveguide section. In each case the normal mode axes of the half-wave plate is at 45° with respect to the direction of the electric field vector of the TE or TM mode of propagation in the waveguide section.
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申请公布号 |
US6641662(B2) |
申请公布日期 |
2003.11.04 |
申请号 |
US20010821862 |
申请日期 |
2001.03.30 |
申请人 |
THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK |
发明人 |
RADOJEVIC ANTONIJE M.;OSGOOD, JR. RICHARD M.;LEVY MIGUEL |
分类号 |
C30B31/22;C30B33/00;G02B6/126;G02B6/14;H01L21/20;H01L21/306;H01L21/762;(IPC1-7):C30B1/00 |
主分类号 |
C30B31/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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