发明名称 |
Manufacturing method of semiconductor device |
摘要 |
The present invention relates to a manufacturing method of a semiconductor device in which a barrier insulating film and a main insulating film having low relative dielectric constant are sequentially formed while a wiring mainly consisting of copper film is coated. Its constitution includes the steps of: forming the barrier insulating film 35a on a substrate 21 subject to deposition, in which an electric power having a first frequency (f1) is applied to a first film forming gas containing at least silicon-containing gas and oxygen-containing gas to transform said first film forming gas into plasma and to cause reaction; and forming the main insulating film 35b having low relative dielectric constant on the barrier insulating film 35a, in which an electric power having a second frequency (f2) higher than the first frequency (f1) is applied to a second film forming gas containing at least the silicon-containing gas and the oxygen-containing gas to transform the second film forming gas into plasma and to cause reaction.
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申请公布号 |
US6649495(B2) |
申请公布日期 |
2003.11.18 |
申请号 |
US20020164709 |
申请日期 |
2002.06.10 |
申请人 |
CANON SALES CO., INC.;SEMICONDUCTOR PROCESS LABORATORY CO., LTD. |
发明人 |
SHIOYA YOSHIMI;NISHIMOTO YUHKO;SUZUKI TOMOMI;IKAKURA HIROSHI;MAEDA KAZUO |
分类号 |
C23C16/30;C23C16/02;C23C16/40;C23C16/509;H01L21/31;H01L21/316;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/20;H01L21/36;C30B1/00 |
主分类号 |
C23C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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