发明名称 |
Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicone structures |
摘要 |
A method of modulating grain size in a polysilicon layer and devices fabricated with the method. The method comprises forming the layer of polysilicon on a substrate; and performing an ion implantation of a polysilicon grain size modulating species into the polysilicon layer such that an average resultant grain size of the implanted polysilicon layer after performing a pre-determined anneal is higher or lower than an average resultant grain size than would be obtained after performing the same pre-determined anneal on the polysilicon layer without a polysilicon grain size modulating species ion implant.
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申请公布号 |
US2003216013(A1) |
申请公布日期 |
2003.11.20 |
申请号 |
US20020147270 |
申请日期 |
2002.05.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GEISS PETER J.;GRECO JOSEPH R.;KONTRA RICHARD S.;LANNING EMILY |
分类号 |
H01L21/28;H01L21/20;H01L21/265;H01L21/331;H01L21/822;H01L27/04;H01L29/08;H01L29/49;H01L29/732;H01L29/78;(IPC1-7):H01L21/20;H01L21/36;H01L21/425 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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