MAGNETO-RESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY, CAPABLE OF REDUCING A SWITCHING MAGNETIC FIELD NECESSARY FOR WRITING INFORMATION WITH A THERMALLY STABLE MAGNETIC STRUCTURE

摘要

PURPOSE: A magneto-resistance effect element and a magnetic memory are provided to comprise the first reference layer, a body portion, projection portions, and a storage layer whose magnetization direction is changed according to an outer magnetic field, thereby realizing a thermally stable magnetic structure while reducing a switching magnetic field necessary for writing information. CONSTITUTION: A ferromagnetic layer(2e) as a storage layer consists of a body portion(3) where a magnetization easy axial direction(5) is longer than a magnetization difficult axial direction, and projection portions(4) formed in almost center. The ferromagnetic layer(2e) has a wider center than a section of the body portion(3) in width.