发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
The present disclosure provides a technique capable of suppressing a deviation in a characteristic of a semiconductor device. There is provided a technique includes: (a) receiving data representing a thickness distribution of a polished silicon-containing layer on a substrate comprising a convex structure whereon the polished silicon-containing layer is formed; (b) calculating, based on the data, a process data for reducing a difference between a thickness of a portion of the polished silicon-containing layer formed at a center portion of the substrate and that of the polished silicon-containing layer formed at a peripheral portion of the substrate; (c) loading the substrate into a process chamber; (d) supplying a process gas to the substrate; and (e) compensating for the difference based on the process data by activating the process gas with a magnetic field having a predetermined strength on the substrate. |
申请公布号 |
US2016293498(A1) |
申请公布日期 |
2016.10.06 |
申请号 |
US201514975987 |
申请日期 |
2015.12.21 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
SUDA Atsuhiko;TOYODA Kazuyuki;KIKUCHI Toshiyuki |
分类号 |
H01L21/66;H01L21/304;H01L21/02 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device, comprising:
(a) receiving data representing a thickness distribution of a polished silicon-containing layer on a substrate comprising a convex structure whereon the polished silicon-containing layer is formed; (b) calculating, based on the data, a process data for reducing a difference between a thickness of a portion of the polished silicon-containing layer formed at a center portion of the substrate and that of the polished silicon-containing layer formed at a peripheral portion of the substrate; (c) loading the substrate into a process chamber; (d) supplying a process gas to the substrate; and (e) compensating for the difference based on the process data by activating the process gas with a magnetic field having a predetermined strength on the substrate. |
地址 |
Tokyo JP |