Methods Of Etching Films Comprising Transition Metals

摘要

Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.

主权项

1. A method of etching a substrate, the method comprising:
activating a substrate surface comprising a transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent wherein the Lewis base or pi acid comprises a chelating amine, 1,2-bis(difluorophosphino)ethane, N2O, NR23, wherein each R2 is independently hydrogen C1-C6 branched or unbranched, substituted or unsubstituted, alkyl, allyl or cyclic hydrocarbon or heteroatomic group, or a compound having the structure: wherein each Rb is independently hydrogen or C1-C4 alkyl.