| 摘要 |
PROBLEM TO BE SOLVED: To avoid a situation that an interface level of an insulation film for with respect to a polysilicon layer becomes high and that the fixed electric charges in the insulation film increase, in a thin film transistor. SOLUTION: In the display apparatus comprising a thin film transistor over an insulating substrate, the thin film transistor comprises a semiconductor layer, a gate electrode, and a gate insulating film provided between the semiconductor layer and the gate electrode, and the gate insulating film includes at least single deposition film deposited by the deposition method. Moreover, the gate insulating film has distribution in the concentration of carbon in the area nearer to the semiconductor layer which becomes smaller than that in the side far from the semiconductor layer without any other deposition film deposited by the deposition method for the semiconductor layer. COPYRIGHT: (C)2004,JPO&NCIPI |
