| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a memory cell which has high selectivity of the memory cell and a large margin of write current and to provide a magnetic random access memory (MRAM). <P>SOLUTION: This MRAM provided with a bit line pair 4/5, a word line 3 and the memory cell 2 is used. The bit line pair 4/5 includes a first bit line 4 and a second bit line 5 extending in a Y direction. The word line 3 extends in an x direction. The memory cell 2 is provided at the position where the bit line pair 4/5 intersect the word line 3 and includes a first transistor (first Tr) 6, a second transistor (second Tr) 16 and a magnetic resistance element 7. In the first Tr 6, the gate is connected to the word line 3 and the source is connected to the first bit line 4. In the second Tr 16, the gate is connected to the word line 3, the source is connected to the second bit line 5 and the source is connected to the drain of the first Tr 6. The magnetic resistance element 7 has spontaneous magnetization, the magnetization direction of which is inverted in accordance with data to be stored and is provided between a ground 24 and the drain of the first Tr 6. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
