发明名称 |
Electrostatic discharge depolarization using high density plasma |
摘要 |
A method for electrostatic discharge depolarization is implemented. The buildup of charge on tool structures in fabrication tools for semiconductor processing may be expected to be of concern whenever high voltage is employed near the structure in a tool. The process herein includes selectively exposing the structure to a plasma for a selected time interval. The duration of the exposure time interval is sufficient to reduce the polarization of the structure whereby the forces due to the polarization do not interfere with the transport or movement of a wafer being processed.
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申请公布号 |
US6852990(B1) |
申请公布日期 |
2005.02.08 |
申请号 |
US20010896381 |
申请日期 |
2001.06.29 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
ZHAO ZHIYONG;HENDRIX DAVID |
分类号 |
H01J37/02;H01J61/00;(IPC1-7):H01J61/00 |
主分类号 |
H01J37/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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