METHOD FOR FABRICATING STI OF SEMICONDUCTOR DEVICE TO STABILIZE SEMICONDUCTOR PROCESS AND IMPROVE RELIABILITY OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating an STI(shallow trench isolation) of a semiconductor device is provided to stabilize a semiconductor process and improve reliability of a semiconductor device by performing an oxide layer gap-fill process by a PECVD(plasma enhanced chemical vapor deposition) method and an APCVD(atmospheric pressure chemical vapor deposition) method. CONSTITUTION: A pad oxide layer(12) and a nitride layer(14) are sequentially formed on a substrate(10). A predetermined depth of the substrate in an isolation region is eliminated. An STI liner oxide layer(16) is formed on the exposed surface of the substrate. An STI fill oxide layer(18) is formed on the resultant structure by a PECVD method and an APCVD method.